pdp spm tm ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com march 2007 FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain FVP18030IM3LSG1 sustain features ? use of high speed 300v igbts with parallel frds ? single-grounded power supply by means of built-in hvic ? sufficient current driving cap ability for igbts due to adding a buffer ? isolation rating of 1500vrms/min. ? low leakge current due to using an insulated metal sub- strates applications ? sustain part of a pdp(plasma display panel) general description it is an advanced samart power module(spm tm ) that fairchild has newly developed and designed to provide very compact and optimized performance for t he sustaining circuit of pdp driving system. it contains hv ics, buffers and low-loss high speed igbts that are needed to compose the sustaining cir- cuits. under voltage lock-out protection function enhances the system reliabilty. the high speed built-in hvic provides opto- coupler-less single power suppl y igbt gate driving capability that further reduce the overall system size of pdp and the buffer provides high current driv ing capability of igbts. package outlines figure 1.
2 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain pin configurations figure 2. top view
3 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain pin descriptions pin number pin name pin descriptions 1 coml low-side signal ground 2 vinl low-side signal input 3 vccl low-side supply voltage for hvic 4 vbl low-side floating supply voltage for buffer ic and igbt driving 5 gl low-side gate 6 vsl low-side floating ground for buffer ic and igbt driving 7 ignd ims ground 8 comh high-side signal ground 9 vinh high-side signal input 10 vcch high-side supply voltage for hvicg 11 vbh high-side floating supply voltage for buffer ic and igbt driving 12 gh high-side gate 13 vsh high-side floating ground for buffer ic and igbt driving 14 ch high-side igbt collector 15 eh high-side igbt emitter 16 ah high-side diode anode 17 cl low-side igbt collector 18 al low-side diode anode 19 el low-side igbt emitter
4 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain internal equivalent circuit and input/output pins (bottom view) figure 3. hvic vb out vs com in vcc (6) vsl (18) al (17) cl (10) vcch buffer ic out com com in vcc (19) el (5) vbl (3) vccl (12) gh (15) eh (16) ah hvic (8) comh (14) ch (13) vsh (1) coml buffer ic out com com in vcc (2) vinl (9) vinh (4) gl vb out vs com in vcc (11) vbh (7) ignd
5 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain absolute maximum ratings (t c = 25c, unless otherwise specified) notes : 1 pulse width = 100 sec, duty = 0.1; half sine wave *i cp limited by max t j thermal resistance symbol parameter conditions rating units vcc control supply voltage applied between vccl-coml, vcch - comh 20 v vbs control bias voltage applied between vbl - vsl, vbh - vsh 20 v vin input signal voltage applied between vinl-coml,vinh - comh -0.3~17 v symbol parameter conditions rating units vce collector to emitter voltage between cl to el , between ch to eh v gh-eh =v gl-el =0v , i ch =i cl =250 a 300 v vrrm peak repetitive reverse voltage between ch to ah , between cl to al i ah =i al =250 a 300 v vin input signal voltage vinl, vinh -0.3 to vcc+0.3 v i c collector current continuous between cl to el , between ch to eh 180 a i f(av) average rectified forward current between ch to ah , between cl to al 10 a i cp pulsed collector current between cl to el , between ch to eh (note1) 450 a i fp pulsed diode current between ch to ah , between cl to al (note1) 100 a symbol parameter conditions rating units p d igbt dissipation tc=25c per igbt 167 w tc=100c per igbt 67 w frd dissipation tc=25c per diode 34 w tc=100c per diode 14 w tj operating junction temperture -20 ~ 150 c t c module case operation temperature -20 ~ 125 c t stg storage temperature -40 ~ 125 c v iso isolation voltage 60hz, sinusoidal, ac 1 minute, connection pins to ims substrate 1500 v rms symbol parameter conditions min. max. units r th(j-c) junction to case thermal resistance between ch to eh, between cl to el per igbt - 0.75 c/w between ch to ah, between cl to al per diode - 3.70 c/w
6 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain electrical characteristics (t c = 25c, unless otherwise specified) notes : 2 t on and t off include the propagation delay time of internal drive ic. for the detailed information, please see figure 4. figure 4. switching time definition symbol parameter conditions min. typ. max. units i qcc quiescent vcc supply current vcc = 15v vinl , vinh = 0v vccl-coml , vcch-comh - - 100 a i qbs quiescent vbs supply current vbs = 15v vinl, vinh= 0v vbl- vsl, vbh- vsh - - 500 a uv bsd supply circuit under voltage protection detection level 10.1 11.3 12.5 v uv bsr reset level 10.5 11.7 12.9 v vin (on) on threshold voltage applied between vinl-coml , ,vinh - comh 3.0 - v vin (off) off threshold voltage - - 0.8 v symbol parameter condition min. typ. max. units v ce(sat) igbt collector-emitter saturation voltage vcc = vbs = 15v vin = 5v i c = 40a, t j = 25c - - 1.4 v i c = 180a, t j = 25c - 1.9 - v v f diode forward voltage vin = 0v i c =10a, t j = 25c - - 1.4 v td on switching times vce=200v, vcc= vbs=15v ic = 20a vin = 0v ? v , inductive load t c = 25c (note2) - 230 - ns t r -54- ns td off - 260 - ns t f - 108 - ns i ces collector-emitter leakage current vce = 300v - - 250 a i r diode anode-cathode leakage current between eh to ch between el to cl v anode-cathode =300v 250 a i c v ce v ce i c v in v in 10% of i c t d(on) t r 10% of i c 90% of i c t d(off) t f 90% of i c
7 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain typical performance characteristics figure 5. typical output characteristics figure 6. typical output characteristics figure 7. typical forward voltage drop figure 8. typical forward voltage drop 0246 0 50 100 150 200 250 300 12v t c = 25 o c 20v 15v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0246 0 50 100 150 200 250 300 12v t c = 125 o c 20v 15v 10v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0.20.40.60.81.01.21.41.61.82.0 0.1 1 10 100 t c = 75 o c t c = 125 o c forward current, i f [a] forward voltage. v f [v] t c = 25 o c between ch to eh between cl to al 0.1 1 10 100 1000 0.01 0.1 1 10 100 collector current, ic [a] collector-emitter voltage, v ce [v] single nonrepetitive pulse tc=25 o c curves must be derated linearly with increase in temperature 100 s 50 s 1ms ic max (pulsed)
8 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain mechanical characteristics and ratings figure 9. flatness measurement position parameter conditions limits units min. typ. max. mounting torque mounting screw: - m3 recommended 0.62n?m 0.51 0.62 0.72 n?m device flatness note figure 5 0 - +100 m weight - 13.4 - g
9 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain detailed package outline drawings figure 10.
10 www.fairchildsemi.com FVP18030IM3LSG1 rev. a FVP18030IM3LSG1 sustain tm rev. i24 trademarks the following are registered and unregistered trademarks fairchild se miconductor owns or is authori zed to use and is not intend ed to be an exhaustive list of all such trademarks. disclaimer fairchild semiconductor reserves the right to make ch anges without further no tice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit d escribed herein; neither does it convey any license under its patent rights, nor the ri ghts of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semicon ductor corporation. as used herein: 1. life support devices or sy stems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose fail ure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms acex ? across the board. around the world.? activearray? bottomless? build it now? coolfet? crossvolt ? ctl? current transfer logic? dome? e 2 cmos? ecospark ? ensigna? fact quiet series? fact ? fast ? fastr? fps? frfet ? globaloptoisolator? gto? hisec? i-lo ? implieddisconnect? intellimax? isoplanar? microcoupler? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar ? pacman? pop? power220 ? power247 ? poweredge? powersaver? powertrench ? programmable active droop? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? scalarpump? smart start? spm ? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tcm? the power franchise ? ? tinyboost? tinybuck? tinylogic ? tinyopto? tinypower? tinywire? trutranslation? serdes? uhc ? unifet? vcx? wire? datasheet identification product status definition advance information for mative or in design this datasheet contains the design s pecifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data; supplementary data will be pub- lished at a later date. fairchild semic onductor reserves the right to make changes at any time without notice to improve design. no identification needed full production this datasheet contains final specifications. fairchil d semiconductor reserves the right to make changes at any time without notice to improve design. obsolete not in production this datasheet contains specificati ons on a product that has been discontin- ued by fairchild semiconductor. the datasheet is printed for reference infor- mation only. tm
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